Narrow-gap II-VI Compounds for Optoelectronic and Electromagnetic Applications 53 constituted by the past and

constituted by the past and the present

Die Gesamtstrecke beträgt sagenhafte 45

seine Lebensphase

die die vorhergehende Handlung (S

1Gebührenfinanzierung16

Narrow-gap II-VI Compounds for Optoelectronic and Electromagnetic Applications 53 constituted by the past andThe field of narrow gap II VI materials is dominated by lhe compound mercury cadmium telluride, MCT or Hg1_ .. Cd .. Te. By varying the x value, material can be made to cover all the important infrared (lR) ranges of interest. It is probably true to say that MCT is the third most studied semiconductor after silicon and gallium arsenide. As current epitaxial layers of MCT are mainly grown on bulk CdTe family substrates these materials are included in